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Compound Semiconductors Strained Layers and Devices
herausgegeben von Suresh Jain, Magnus Willander und R. Van OverstraetenInhaltsverzeichnis
- 1 Introduction.
- 1.1 Evolution of strained layers.
- 1.2 Conventional III-V-based heterostructures.
- 1.3 III-Nitrides.
- 1.4 Wide bandgap II-VI semiconductors.
- 1.5 Material parameters.
- 1.6 Scope and organization of this book.
- 2 Characterization and growth.
- 2.1 Methods of characterization.
- 2.2 Epitaxial growth methods.
- 2.3 Growth of conventional III-V semiconductors.
- 2.4 Growth of II-VI semiconductors.
- 2.5 Growth of Ill-nitride epilayers.
- 3 Strain and critical thickness.
- 3.1 Strain and energies of epilayers.
- 3.2 Processes involved in dislocation generation.
- 3.3 Critical thickness.
- 4 Strain relaxation and defects.
- 4.1 Strain in GeSi layers.
- 4.2 Strain in III-V semiconductor layers.
- 4.3 Strain in II-VI layers.
- 4.4 Strain and defects in Ill-Nitride layers.
- 5 Band structure and optical properties.
- 5.1 Band structure.
- 5.2 Band offsets.
- 5.3 Optical properties of III-V semiconductors.
- 5.4 Optical properties of II-VI semiconductors.
- 5.5 Optical properties of Ill-Nitrides.
- 6 Electrical and magnetic properties.
- 6.1 Electrical properties of II-VI semiconductors.
- 6.2 Electrical properties of n-type GaN.
- 6.3 Electrical properties of p-type Ill-Nitrides.
- 6.4 Electrical properties A1N, InN and alloys.
- 6.5 Schottky barriers and ohmic contacts.
- 6.6 Effect of applied electric field.
- 6.7 Piezoelectric effect.
- 6.8 Effect of magnetic field on semiconductors.
- 7 Strained layer optoelectronic devices.
- 7.1 Conventional-Ill-V semiconductor lasers.
- 7.2 ZnSe-based light emitters and other devices.
- 7.3 Other II-VI semiconductor applications.
- 7.4 Ill-Nitride Light Emitting Diodes.
- 7.5 GaN based Lasers.
- 8 Transistors.
- 8.1 InGaAs transistors.
- 8.2 II-VI semiconductor transistors.
- 8.3 Ill-Nitride based transistors.
- 8.4 Device Processing.
- 9 Summary and conclusions.
- 9.1 Growth, defects and strain.
- 9.2 Band structure and electronic properties.
- 9.3 Applications and future work.
- Appendix A.