Compound Semiconductors Strained Layers and Devices

Inhaltsverzeichnis

• 1 Introduction.
• 1.1 Evolution of strained layers.
• 1.2 Conventional III-V-based heterostructures.
• 1.3 III-Nitrides.
• 1.4 Wide bandgap II-VI semiconductors.
• 1.5 Material parameters.
• 1.6 Scope and organization of this book.
• 2 Characterization and growth.
• 2.1 Methods of characterization.
• 2.2 Epitaxial growth methods.
• 2.3 Growth of conventional III-V semiconductors.
• 2.4 Growth of II-VI semiconductors.
• 2.5 Growth of Ill-nitride epilayers.
• 3 Strain and critical thickness.
• 3.1 Strain and energies of epilayers.
• 3.2 Processes involved in dislocation generation.
• 3.3 Critical thickness.
• 4 Strain relaxation and defects.
• 4.1 Strain in GeSi layers.
• 4.2 Strain in III-V semiconductor layers.
• 4.3 Strain in II-VI layers.
• 4.4 Strain and defects in Ill-Nitride layers.
• 5 Band structure and optical properties.
• 5.1 Band structure.
• 5.2 Band offsets.
• 5.3 Optical properties of III-V semiconductors.
• 5.4 Optical properties of II-VI semiconductors.
• 5.5 Optical properties of Ill-Nitrides.
• 6 Electrical and magnetic properties.
• 6.1 Electrical properties of II-VI semiconductors.
• 6.2 Electrical properties of n-type GaN.
• 6.3 Electrical properties of p-type Ill-Nitrides.
• 6.4 Electrical properties A1N, InN and alloys.
• 6.5 Schottky barriers and ohmic contacts.
• 6.6 Effect of applied electric field.
• 6.7 Piezoelectric effect.
• 6.8 Effect of magnetic field on semiconductors.
• 7 Strained layer optoelectronic devices.
• 7.1 Conventional-Ill-V semiconductor lasers.
• 7.2 ZnSe-based light emitters and other devices.
• 7.3 Other II-VI semiconductor applications.
• 7.4 Ill-Nitride Light Emitting Diodes.
• 7.5 GaN based Lasers.
• 8 Transistors.
• 8.1 InGaAs transistors.
• 8.2 II-VI semiconductor transistors.
• 8.3 Ill-Nitride based transistors.
• 8.4 Device Processing.
• 9 Summary and conclusions.
• 9.1 Growth, defects and strain.
• 9.2 Band structure and electronic properties.
• 9.3 Applications and future work.
• Appendix A.