Compound Semiconductors Strained Layers and Devices | ISBN 9780792377696

Compound Semiconductors Strained Layers and Devices

herausgegeben von Suresh Jain, Magnus Willander und R. Van Overstraeten
Mitwirkende
Herausgegeben vonSuresh Jain
Herausgegeben vonMagnus Willander
Herausgegeben vonR. Van Overstraeten
Buchcover Compound Semiconductors Strained Layers and Devices  | EAN 9780792377696 | ISBN 0-7923-7769-9 | ISBN 978-0-7923-7769-6

Compound Semiconductors Strained Layers and Devices

herausgegeben von Suresh Jain, Magnus Willander und R. Van Overstraeten
Mitwirkende
Herausgegeben vonSuresh Jain
Herausgegeben vonMagnus Willander
Herausgegeben vonR. Van Overstraeten

Inhaltsverzeichnis

  • 1 Introduction.
  • 1.1 Evolution of strained layers.
  • 1.2 Conventional III-V-based heterostructures.
  • 1.3 III-Nitrides.
  • 1.4 Wide bandgap II-VI semiconductors.
  • 1.5 Material parameters.
  • 1.6 Scope and organization of this book.
  • 2 Characterization and growth.
  • 2.1 Methods of characterization.
  • 2.2 Epitaxial growth methods.
  • 2.3 Growth of conventional III-V semiconductors.
  • 2.4 Growth of II-VI semiconductors.
  • 2.5 Growth of Ill-nitride epilayers.
  • 3 Strain and critical thickness.
  • 3.1 Strain and energies of epilayers.
  • 3.2 Processes involved in dislocation generation.
  • 3.3 Critical thickness.
  • 4 Strain relaxation and defects.
  • 4.1 Strain in GeSi layers.
  • 4.2 Strain in III-V semiconductor layers.
  • 4.3 Strain in II-VI layers.
  • 4.4 Strain and defects in Ill-Nitride layers.
  • 5 Band structure and optical properties.
  • 5.1 Band structure.
  • 5.2 Band offsets.
  • 5.3 Optical properties of III-V semiconductors.
  • 5.4 Optical properties of II-VI semiconductors.
  • 5.5 Optical properties of Ill-Nitrides.
  • 6 Electrical and magnetic properties.
  • 6.1 Electrical properties of II-VI semiconductors.
  • 6.2 Electrical properties of n-type GaN.
  • 6.3 Electrical properties of p-type Ill-Nitrides.
  • 6.4 Electrical properties A1N, InN and alloys.
  • 6.5 Schottky barriers and ohmic contacts.
  • 6.6 Effect of applied electric field.
  • 6.7 Piezoelectric effect.
  • 6.8 Effect of magnetic field on semiconductors.
  • 7 Strained layer optoelectronic devices.
  • 7.1 Conventional-Ill-V semiconductor lasers.
  • 7.2 ZnSe-based light emitters and other devices.
  • 7.3 Other II-VI semiconductor applications.
  • 7.4 Ill-Nitride Light Emitting Diodes.
  • 7.5 GaN based Lasers.
  • 8 Transistors.
  • 8.1 InGaAs transistors.
  • 8.2 II-VI semiconductor transistors.
  • 8.3 Ill-Nitride based transistors.
  • 8.4 Device Processing.
  • 9 Summary and conclusions.
  • 9.1 Growth, defects and strain.
  • 9.2 Band structure and electronic properties.
  • 9.3 Applications and future work.
  • Appendix A.