Spin and Optoelectronic Properties of Single Vacancies Embedded in Atomically Thin Semiconductor Devices von Alexander Hötger | ISBN 9783946379553

Spin and Optoelectronic Properties of Single Vacancies Embedded in Atomically Thin Semiconductor Devices

von Alexander Hötger
Buchcover Spin and Optoelectronic Properties of Single Vacancies Embedded in Atomically Thin Semiconductor Devices | Alexander Hötger | EAN 9783946379553 | ISBN 3-946379-55-9 | ISBN 978-3-946379-55-3
Inhaltsverzeichnis 1

Spin and Optoelectronic Properties of Single Vacancies Embedded in Atomically Thin Semiconductor Devices

von Alexander Hötger
Two-dimensional materials exhibit outstanding electronic and optical properties that can be tuned by various parameters, such as magnetic and electric fields, impurities, defects, and the dielectric environment. A He-ion beam focused on atomically thin 2D materials creates point-defects that can be utilized in future quantum networks. In this work, we characterize the sulfur vacancy in monolayer MoS2 with the help of magneto- and optoelectronic-spectroscopy methods.