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Towards Monolithic III-V Nanowire Quantum Emitters for Integrated Silicon Photonics
von Hyowon JeongThis dissertation presents the development of monolithically integrated quantum light sources on silicon (Si) photonic platforms, targeting scalable quantum photonic integrated circuits (QPICs). The core idea is to employ vertically integrated III-V nanowire (NW) waveguides with deterministically embedded quantum dot (QD) sources. This work systematically addresses the critical challenges by optimizing the NW host materials and axial heterostructures for improved optical and structural performance.
The first part focuses on the entirely noncatalytic selective-area molecular beam epitaxy (MBE) growth of GaAs(Sb) NWs on Si substrates. The incorporation of small amounts of antimony ([Sb] ~2–3%) remarkably enhances axial growth dynamics, morphology, and optical emission characteristics across various array geometries, while Si codoping further improves growth yield and array uniformity. Comprehensive structural and optical characterizations identify optimized growth conditions that enable precise tailoring of the NW microstructure and exciton dynamics, thereby establishing a tunable NW platform.
The second part explores the development of optically active InGaAs axial heterostructures within the established GaAs(Sb) NWs. Structural and optical analyses confirm the successful axial insertion of InGaAs segments with negligible radial deposition, with luminescence originating from the active InGaAs region. The influence of tunable array geometry parameters and facet structure on growth behavior and optical performance is investigated, with initial photon correlation measurements indicating the potential for non-classical light emission.
Finally, the third part demonstrates the fabrication of Si ridge waveguides on a silicon-on-insulator (SOI) platform and the site-selective epitaxial integration of GaAs(Sb) NWs. NW growth conditions are calibrated for SOI platforms, which differ from flat Si substrates, and an optimized growth temperature of 675 °C enables high-yield NW integration along the waveguides.
The findings in this dissertation establish a foundation for scalable NW-based quantum emitters integrated into Si photonic circuits, advancing the realization of practical quantum photonic technologies.
The first part focuses on the entirely noncatalytic selective-area molecular beam epitaxy (MBE) growth of GaAs(Sb) NWs on Si substrates. The incorporation of small amounts of antimony ([Sb] ~2–3%) remarkably enhances axial growth dynamics, morphology, and optical emission characteristics across various array geometries, while Si codoping further improves growth yield and array uniformity. Comprehensive structural and optical characterizations identify optimized growth conditions that enable precise tailoring of the NW microstructure and exciton dynamics, thereby establishing a tunable NW platform.
The second part explores the development of optically active InGaAs axial heterostructures within the established GaAs(Sb) NWs. Structural and optical analyses confirm the successful axial insertion of InGaAs segments with negligible radial deposition, with luminescence originating from the active InGaAs region. The influence of tunable array geometry parameters and facet structure on growth behavior and optical performance is investigated, with initial photon correlation measurements indicating the potential for non-classical light emission.
Finally, the third part demonstrates the fabrication of Si ridge waveguides on a silicon-on-insulator (SOI) platform and the site-selective epitaxial integration of GaAs(Sb) NWs. NW growth conditions are calibrated for SOI platforms, which differ from flat Si substrates, and an optimized growth temperature of 675 °C enables high-yield NW integration along the waveguides.
The findings in this dissertation establish a foundation for scalable NW-based quantum emitters integrated into Si photonic circuits, advancing the realization of practical quantum photonic technologies.