Heterostructure Epitaxy and Devices

Inhaltsverzeichnis

• Section I. Epitaxial growth.
• Simulation of III-V layer growth (invited).
• Real time monitoring of epitaxial growth (invited).
• Influence of carrier gas on AIAs, GaAs and InP MOCVD growth.
• LP-MOVPE of III-V semiconductors using highly pure N2 as the carrier gas.
• Dependence of properties of LP MOCVD InGaP layers on growth conditions.
• Growth of GaN MOCVD layers on GaN single crystals.
• Electrical and optical properties of Te-doped GaSb grown by MOVPE.
• Computer simulations of epitaxial growth, surface kinetic processes and RHEED intensity oscillations.
• Growth and characterization of InP/Ga0.47 In0.53 As deposited by MOMBE.
• Investigation of the effect of GaAs buffer layers grown by MBE at different temperatures on the performance of GaAs MESFETs.
• Multilayered GaAs VPE structures for micro machining.
• Growth of InP and GalnAsP layers by liquid-phase epitaxy using holmium gettering and doping.
• Meander type LPE and high temperature stability of elastically strained GalnAsP/InP layers.
• Section II. Heterostructures.
• Scanning tunneling microscopy characterization of heterostructures.
• Microscopic origin of femtosecond spectral hole burning in quantum wells.
• Carrier capture due to carrier-carrier interaction in quantum wells.
• Optical and theoretical study of GaAs quantum wells embedded in GaAs/AlAs superlattices.
• MOCVD growth and characterization of InAs/GaAs superlattices.
• Electrical characteristics of epitaxial Al/Al xGa 1-x As /n-Al 0.25Ga 0.75 As heterostructures.
• Investigation of a GaAs heterostructure with an AlAs potential barrier by DLTS measurements.
• Effect of heterobarriers on the DX center in AlGaAsSb and in GaAlAs.
• Mechanical study of the strained InxGa1-x As/GaAs heterostructures.
• Hot electrons at semiconductor heterojunctions.
• Section III. Composite systems.
• III/V-compound semiconductors on silicon (invited).
• Crystal growth of column III nitrides by OMVPE (invited).
• GaSb dots grown on GaAs surface by MOCVD.
• Crystallographic tilting in lattice-mismatched heteroepitaxy: a kinetic approach.
• Optimization of MOVPE growth for InGaAs on (00l)Si.
• SEM-based characterization techniques for strongly mismatched heteroepitaxy.
• Defect characterization of strained InGaAs structures prepared on InP and GaAs.
• Influence of the temperature on the morphology and crystal quality of MBE grown InAs/GaAs heterostructures.
• Section IV: Characterization.
• Study of fundamental growth mechanism by atomic force microscopy (invited).
• Characterisation of the epitaxial layers using the lift-off technique (invited).
• Many crystal X-ray diffractometry on superlattices (invited).
• Quantum magnetotransport in two-dimensional electron gas in InGaAs/InP heterostructures.
• Transport properties of MBE GaAs layers grown at 420°C.
• Donor neutralisation by hydrogen in S and Se doped GaAs and GaAlAs.
• Comparison of photoluminescence spectra of MOCVD and VPE grown GaAs layers.
• X-ray diffraction study of MOCVD grown InGaP.
• Structural and optical properties of ordered domains in InGaP2 alloys.
• Ordering in InGaP prepared by MOCVD.
• Ti/Pt/Au ohmic contacts to p-type InGaP.
• Comparison of physical properties of bulk crystals and epitaxial layers of GaN.
• Section V. Devices.
• MOCVD growth of Ga1-xInxAsyP1-y-GaAs quantum structures (invited).
• InP-based HBT: principle, design and technology (invited).
• Technology and properties of aluminium-free pseudomorphic HEMTs based on InP/InGaAs structures (invited).
• Tunneling heterostructure devices (invited).
• InGaAs/GaAs pseudomorphic double delta doped HEMTs.
• Alpha particle radiation effects in highelectron mobility transistors.
• Single versus double current bistability in resonant-tunnelling devices.
• Heterostructure lasers based on GaSb and InAs for spectroscopy.
• AlAs and InGaP potential barrier photodetector grown on vicinal surfaces.
• GaP-based diodes for electrometric applications.
• Design of InGaAs/InAlGaAs/InP RCE PIN photodiode.
• InP/GalnAs MSM photodetector for simple integration in HEMT circuits.
• Nature of internal feedback in the self-electro-optic effect devices.
• Optoelectronic integrated circuit A2 B6-insulator- A3B5 with positive feedback.
• Characteristics of multiple delta doped GaAs structures.