„Students or working professionals interested in SiC technology will find this book worth reading.“ (IEEE Electrical Insulation Magazine, 1 November 2015)
„If you have any interest in the now emerging SiC semiconductor devices, this book covers it all and in sufficient depth to answer questions that might arise from process engineers, device modelers, or power - circuits and systems designers. It really is the book to have on SiC, and because of its breadth as well as depth, would be a good supplement to solid - state physics or electronics books, device design or SPICE modeling, or to provide a solid foundation for circuit design with SiC devices.“ (How2Power. com, 1 March 2015)
Fundamentals of Silicon Carbide Technology
Growth, Characterization, Devices and Applications
von Tsunenobu Kimoto und James A. CooperA comprehensive introduction and up-to-date reference toSiC power semiconductor devices covering topics from materialproperties to applications
Based on a number of breakthroughs in SiC material scienceand fabrication technology in the 1980s and 1990s, the first SiCSchottky barrier diodes (SBDs) were released as commercial productsin 2001. The SiC SBD market has grown significantly sincethat time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency powersystems. In this wide-ranging book, the authors draw on theirconsiderable experience to present both an introduction to SiCmaterials, devices, and applications and an in-depth reference forscientists and engineers working in this fast-movingfield. Fundamentals of Silicon Carbide Technologycovers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of themost important systems applications. Specifically includedare:
* A complete discussion of SiC material properties, bulk crystalgrowth, epitaxial growth, device fabrication technology, andcharacterization techniques.
* Device physics and operating equations for Schottky diodes, pindiodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, andthyristors.
* A survey of power electronics applications, includingswitch-mode power supplies, motor drives, power converters forelectric vehicles, and converters for renewable energysources.
* Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors.
* Fully illustrated throughout, the text is written by recognizedexperts with over 45 years of combined experience in SiC researchand development.
This book is intended for graduate students and researchers incrystal growth, material science, and semiconductor devicetechnology. The book is also useful for design engineers, application engineers, and product managers in areas such as powersupplies, converter and inverter design, electric vehicletechnology, high-temperature electronics, sensors, and smart gridtechnology.
Based on a number of breakthroughs in SiC material scienceand fabrication technology in the 1980s and 1990s, the first SiCSchottky barrier diodes (SBDs) were released as commercial productsin 2001. The SiC SBD market has grown significantly sincethat time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency powersystems. In this wide-ranging book, the authors draw on theirconsiderable experience to present both an introduction to SiCmaterials, devices, and applications and an in-depth reference forscientists and engineers working in this fast-movingfield. Fundamentals of Silicon Carbide Technologycovers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of themost important systems applications. Specifically includedare:
* A complete discussion of SiC material properties, bulk crystalgrowth, epitaxial growth, device fabrication technology, andcharacterization techniques.
* Device physics and operating equations for Schottky diodes, pindiodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, andthyristors.
* A survey of power electronics applications, includingswitch-mode power supplies, motor drives, power converters forelectric vehicles, and converters for renewable energysources.
* Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors.
* Fully illustrated throughout, the text is written by recognizedexperts with over 45 years of combined experience in SiC researchand development.
This book is intended for graduate students and researchers incrystal growth, material science, and semiconductor devicetechnology. The book is also useful for design engineers, application engineers, and product managers in areas such as powersupplies, converter and inverter design, electric vehicletechnology, high-temperature electronics, sensors, and smart gridtechnology.
