Reihe Science for Systems

Luminescence Properties of SiV-centers in diamond diodes

Luminescence Properties of SiV-centers in diamond diodes

Fast-Switching Monolithically Integrated High-Voltage GaN-on-Si Power Converters

Fast-Switching Monolithically Integrated High-Voltage GaN-on-Si Power Converters

Analysis, design and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology

Analysis, design and experimental evaluation of sub-THz power amplifiers based on GaAs metamorphic HEMT technology

Development and Description of Photochromic Devices Prepared by Sputtering

Development and Description of Photochromic Devices Prepared by Sputtering

GaN-based High Electron Mobility Transistors with high Al-content barriers.

GaN-Based Tri-Gate High Electron Mobility Transistors.